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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1655
DESCRIPTION With TO-220F package Excellent DC current gain characteristics Low collector saturation voltage Wide area of safe operation Complement to type 2SD2394
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM

PARAMETER
CONDITIONS Open emitter
Collector-base voltage Collector-emitter voltage
IN
Emitter-base voltage
Collector current
HAN C
SEM GE
Open base Ta=25ae
OND IC
TOR UC
MAX -80 -60 -7 -3 -6 2
UNIT V V V A A
Open collector
Collector current-peak
PC
Collector dissipation TC=25ae 25 150 -55~150 ae ae
W
Tj Tstg
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-1mA ;IB=0 IC=-50|I IE=-50|I A ;IE=0 A ;IC=0 MIN -60 -80 -7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT
2SB1655
TYP.
MAX
UNIT V V V
IC=-2A ;IB=-0.2A IC=-2A ;IB=-0.2A VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz 100
-1.5 -1.5 -10 -10 200 50 |I |I
V V A A
Output capacitance
Transition frequency
ANG CH
IN
EMIC ES
IC=-0.5A ; VCE=-5V
DUC ON
15
TOR
pF MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1655
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions
3


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